Modeling of a multilayer mid-infrared thermal emitter for robust manufactoring specifications
Sprache des Vortragstitels:
Englisch
Original Tagungtitel:
Microelectronic Systems Symposium 2016
Sprache des Tagungstitel:
Englisch
Original Kurzfassung:
Narrowband and highly directional mid-infrared thermal emission was simulated with the goal to provide foundations for the design and the fabrication process of such a device. An aperiodic multilayer stack of dielectric layers (Silicon and Silica) on a metallic structure was the concept of choice. Such a device enhances the thermal emittance peak near to unity around a target wavelength to which the individual layer lengths were optimized. This study considers stacks with five and seven layers arranged on a metal substrate beginning with silica on the top. A transfer matrix approach was devised and a proprietary genetic-algorithm toolbox was used to calculate and maximize absorption for a target wavelength and device operating temperature. The wavelength- as well as temperature-dependences of all materials were carefully implemented using state-of-the-art dispersion models. Many stack configurations together with three different metallic substrate metals (silver, tungsten or aluminum) are investigated in order to find principles for designing effective device configurations. Moreover, small random variations on the individual layer thicknesses were studied via a simple Monte-Carlo simulation to test the stability in emittance performance and target resonance wavelength for different stack configurations.
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