Friedrich Schäffler,
"Electron and hole mobilities in Si/SiGe heterostructures"
, in Properties of Silicon Germanium and SiGe: Carbon, 2000, F. Schäffler: Electron and hole mobilities in Si/SiGe heterostructures, In: "Properties of Silicon Germanium and SiGe: Carbon", EMIS Data Review Series No. 24 , edited by Erich Kasper and Klara Lyutovich, University of Stuttgart, Germany. INSPEC (London) 2000, p. 196-209.
Original Titel:
Electron and hole mobilities in Si/SiGe heterostructures
Sprache des Titels:
Englisch
Journal:
Properties of Silicon Germanium and SiGe: Carbon
Erscheinungsjahr:
2000
Notiz zum Zitat:
F. Schäffler: Electron and hole mobilities in Si/SiGe heterostructures, In: "Properties of Silicon Germanium and SiGe: Carbon", EMIS Data Review Series No. 24 , edited by Erich Kasper and Klara Lyutovich, University of Stuttgart, Germany. INSPEC (London) 2000, p. 196-209.
Publikationstyp:
Aufsatz / Paper in sonstiger referierter Fachzeitschrift
Forschungs-