R. Klockenkämper, A. v. Bohlen, Hans-Werner Becker, Leopold Palmetshofer,
"Comparison of shallow depth profiles of cobalt-implanted Si wafers determined by total reflection X-ray fluorescence analysis after repeated stratified etching and by Rutherford backscattering spectrometry"
, in Surface and Interface Analysis, Vol. 27, Nummer 11, Seite(n) 1003-1008, 11-1999, R. Klockenkämper, A.v. Bohlen, H.W. Becker, L. Palmetshofer Comparison of shallow depth profiles of cobalt-implanted Si wafers determined by total reflection X-ray fluorescence analysis after repeated stratified etching and by Rutherford backscattering spectrometry Surface Interface Anal. 27, 1003 (1999)
Original Titel:
Comparison of shallow depth profiles of cobalt-implanted Si wafers determined by total reflection X-ray fluorescence analysis after repeated stratified etching and by Rutherford backscattering spectrometry
Sprache des Titels:
Englisch
Journal:
Surface and Interface Analysis
Volume:
27
Number:
11
Seitenreferenz:
1003-1008
Erscheinungsmonat:
11
Erscheinungsjahr:
1999
Notiz zum Zitat:
R. Klockenkämper, A.v. Bohlen, H.W. Becker, L. Palmetshofer Comparison of shallow depth profiles of cobalt-implanted Si wafers determined by total reflection X-ray fluorescence analysis after repeated stratified etching and by Rutherford backscattering spectrometry Surface Interface Anal. 27, 1003 (1999)
Forschungs-