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"Comparison of shallow depth profiles of cobalt-implanted Si wafers determined by total reflection X-ray fluorescence analysis after repeated stratified etching and by Rutherford backscattering spectrometry"
, 1999, R. Klockenkämper, A.v. Bohlen, H.W. Becker, L. Palmetshofer Comparison of shallow depth profiles of cobalt-implanted Si wafers determined by total reflection X-ray fluorescence analysis after repeated stratified etching and by Rutherford backscattering spectrometry Surface Interface Anal. 27, 1003 (1999)
Original Titel:
Comparison of shallow depth profiles of cobalt-implanted Si wafers determined by total reflection X-ray fluorescence analysis after repeated stratified etching and by Rutherford backscattering spectrometry
Sprache des Titels:
Englisch
Englischer Titel:
Comparison of shallow depth profiles of cobalt-implanted Si wafers determined by total reflection X-ray fluorescence analysis after repeated stratified etching and by Rutherford backscattering spectrometry
Erscheinungsjahr:
1999
Notiz zum Zitat:
R. Klockenkämper, A.v. Bohlen, H.W. Becker, L. Palmetshofer Comparison of shallow depth profiles of cobalt-implanted Si wafers determined by total reflection X-ray fluorescence analysis after repeated stratified etching and by Rutherford backscattering spectrometry Surface Interface Anal. 27, 1003 (1999)
Publikationstyp:
Aufsatz / Paper in sonstiger referierter Fachzeitschrift
Forschungs-