,
"Mechanical strain and electrically active defects in Si implanted with Ge+ ions"
, 1999, Yu. Suprun-Belevich, L. Palmetshofer, B.J. Sealy, N. Emerson Mechanical strain and electrically active defects in Si implanted with Ge+ ions Semicond. Sci. Technol. 14, 565 (1999)
Original Titel:
Mechanical strain and electrically active defects in Si implanted with Ge+ ions
Sprache des Titels:
Englisch
Englischer Titel:
Mechanical strain and electrically active defects in Si implanted with Ge+ ions
Erscheinungsjahr:
1999
Notiz zum Zitat:
Yu. Suprun-Belevich, L. Palmetshofer, B.J. Sealy, N. Emerson Mechanical strain and electrically active defects in Si implanted with Ge+ ions Semicond. Sci. Technol. 14, 565 (1999)
Publikationstyp:
Aufsatz / Paper in sonstiger referierter Fachzeitschrift
Forschungs-