G. Hobler, A. Simionescu, Leopold Palmetshofer, C. Tian, G. Stingeder,
"Boron Channeling Implantations in Silicon: Modeling of Electronic Stopping and Damage Accumulation"
, in Journal of Applied Physics, Vol. 77, Seite(n) 3697?3703, 1995, G. Hobler, A. Simionescu, L. Palmetshofer, C. Tian, G. Stingeder:Boron Channeling Implantations in Silicon: Modeling of Electronic Stopping and Damage Accumulat, J. Appl. Phys. 77, 3697 (1995)
Original Titel:
Boron Channeling Implantations in Silicon: Modeling of Electronic Stopping and Damage Accumulation
Sprache des Titels:
Englisch
Journal:
Journal of Applied Physics
Volume:
77
Seitenreferenz:
3697?3703
Erscheinungsjahr:
1995
Notiz zum Zitat:
G. Hobler, A. Simionescu, L. Palmetshofer, C. Tian, G. Stingeder:Boron Channeling Implantations in Silicon: Modeling of Electronic Stopping and Damage Accumulat, J. Appl. Phys. 77, 3697 (1995)