Y. Suprun-Belevich, Leopold Palmetshofer,
"Deep Defect Levels and Mechanical Strain in Ge+-implanted Silicon"
, in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and, Vol. 96, Nummer 1-2, Seite(n) 245-248, 1995, Yu.R. Suprun-Belevich, L. Palmetshofer;Deep Defect Levels and Mechanical Strain in Ge+-implanted Silicon, Nucl. Instr. and Methods in Phys. Res. B 96, 245 (1995)
Original Titel:
Deep Defect Levels and Mechanical Strain in Ge+-implanted Silicon
Sprache des Titels:
Englisch
Journal:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and
Volume:
96
Number:
1-2
Seitenreferenz:
245-248
Erscheinungsjahr:
1995
Notiz zum Zitat:
Yu.R. Suprun-Belevich, L. Palmetshofer;Deep Defect Levels and Mechanical Strain in Ge+-implanted Silicon, Nucl. Instr. and Methods in Phys. Res. B 96, 245 (1995)