Wolfgang Jantsch, G. Hendorfer, M. Bruckner, Leopold Palmetshofer, Hanka Przybylinska,
"On the Structure of Er Centers in Er-implanted Si"
: Proceedings of the 22nd International Conference on The Physics of Semiconductors, Vol. 1, Seite(n) 2411-2414, 1995, W. Jantsch, G. Hendorfer, M. Bruckner, L. Palmetshofer, H. Przybylinska:On the Structure of Er Centers in Er-implanted Si; Proc. 22nd Int. Conf. Phys. of Semicond., Ed. D.J. Lockwood (World Scientific, Singapore 1995) p 2411
Original Titel:
On the Structure of Er Centers in Er-implanted Si
Sprache des Titels:
Englisch
Original Buchtitel:
Proceedings of the 22nd International Conference on The Physics of Semiconductors
Volume:
1
Seitenreferenz:
2411-2414
Erscheinungsjahr:
1995
Notiz zum Zitat:
W. Jantsch, G. Hendorfer, M. Bruckner, L. Palmetshofer, H. Przybylinska:On the Structure of Er Centers in Er-implanted Si; Proc. 22nd Int. Conf. Phys. of Semicond., Ed. D.J. Lockwood (World Scientific, Singapore 1995) p 2411
Forschungs-