Y. Suprun-Belevich, Leopold Palmetshofer,
"Behaviour of Radiation Defects under the Influence of Mechanical Strain in Ion-impanted Silicon"
, in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and, Vol. 127-128, Seite(n) 38-42, 1997, Yu. Suprun-Belevich, L. Palmetshofer:Behaviour of Radiation Defects under the Influence of Mechanical Strain in Ion-impanted Silicon, Nucl. Instr. Meth. B 127/128, 38 (1997)
Original Titel:
Behaviour of Radiation Defects under the Influence of Mechanical Strain in Ion-impanted Silicon
Sprache des Titels:
Englisch
Journal:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and
Volume:
127-128
Seitenreferenz:
38-42
Erscheinungsjahr:
1997
Notiz zum Zitat:
Yu. Suprun-Belevich, L. Palmetshofer:Behaviour of Radiation Defects under the Influence of Mechanical Strain in Ion-impanted Silicon, Nucl. Instr. Meth. B 127/128, 38 (1997)