Günther Bauer, E. Carlino, I. Eisele, M. Gusso, H. von Känel, C. Penn, C. Rosenblad, J. Schulze, Julian Stangl, L. Tapfer,
"SiGe heteroepitaxy at high growth rates by a new plasma enhanced cvd process"
: Proc. 24th Int. Conf. on the Physics of Semiconductors, 1999, C. Rosenblad, H. von K
nel, J. Stangl, C. Penn, G. Bauer, J. Schulze, I. Eisele, M. Gusso, E. Carlino, L. Tapfer: "SiGe heteroepitaxy at high growth rates by a new plasma enhanced cvd process", Proc. 24th Int. Conf. on the Physics of Semiconductors, ed. D. Gershoni, World Scientific, Singapore 1999, # 1199 (CD-ISBN: 981-02-4030-9)
Original Titel:
SiGe heteroepitaxy at high growth rates by a new plasma enhanced cvd process
Sprache des Titels:
Englisch
Original Buchtitel:
Proc. 24th Int. Conf. on the Physics of Semiconductors
Erscheinungsjahr:
1999
Notiz zum Zitat:
C. Rosenblad, H. von K
nel, J. Stangl, C. Penn, G. Bauer, J. Schulze, I. Eisele, M. Gusso, E. Carlino, L. Tapfer: "SiGe heteroepitaxy at high growth rates by a new plasma enhanced cvd process", Proc. 24th Int. Conf. on the Physics of Semiconductors, ed. D. Gershoni, World Scientific, Singapore 1999, # 1199 (CD-ISBN: 981-02-4030-9)
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