G. Abstreiter, P. Baumgartner, C. Engel, M. Holzmann, J. Nützel, Friedrich Schäffler,
""Fabrication of n- and p- channel in-plane-gate transistors from Si/SiGe/Ge heterostructures by focused laser beam writing""
, 1996, ISBN: 0003-6951, "M. Holzmann, P. Baumgartner, C. Engel, J.F. Nützel, G. Abstreiter, F. Schäffler: "Fabrication of n- and p- channel in-plane-gate transistors from Si/SiGe/Ge heterostructures by focused laser beam writing", Appl. Phys. Lett. 68, 3025-3027 (1996), ISSN-Number 0003-6951"
Original Titel:
"Fabrication of n- and p- channel in-plane-gate transistors from Si/SiGe/Ge heterostructures by focused laser beam writing"
Sprache des Titels:
Englisch
Englischer Titel:
Fabrication of n- and p- channel in-plane-gate transistors from Si/SiGe/Ge heterostructures by focused laser beam writing
Erscheinungsjahr:
1996
Notiz zum Zitat:
"M. Holzmann, P. Baumgartner, C. Engel, J.F. Nützel, G. Abstreiter, F. Schäffler: "Fabrication of n- and p- channel in-plane-gate transistors from Si/SiGe/Ge heterostructures by focused laser beam writing", Appl. Phys. Lett. 68, 3025-3027 (1996), ISSN-Number 0003-6951"
ISBN:
0003-6951
Anzahl der Seiten:
0
Publikationstyp:
Aufsatz / Paper in sonstiger referierter Fachzeitschrift