H.-J. Herzog, Martin Hohnisch, Friedrich Schäffler,
"Relaxation of compositionally graded Si1-xGex buffers: a TEM study"
, in Journal of Crystal Growth, 1995, ISSN: 0022-0248, M. Hohnisch, H.-J. Herzog, F. Sch
ffler: "Relaxation of compositionally graded Si1-xGex buffers: a TEM study", J. Crystal Growth 157, 126 (1995), ISSN-Number 0022-0248
Original Titel:
Relaxation of compositionally graded Si1-xGex buffers: a TEM study
Sprache des Titels:
Englisch
Journal:
Journal of Crystal Growth
Erscheinungsjahr:
1995
Notiz zum Zitat:
M. Hohnisch, H.-J. Herzog, F. Sch
ffler: "Relaxation of compositionally graded Si1-xGex buffers: a TEM study", J. Crystal Growth 157, 126 (1995), ISSN-Number 0022-0248