G. Abstreiter, Günther Bauer, Vaclav Holy, J. H. Li, J. Nützel,
"Investigation of strain relaxation of Ge1-xSix epilayers on Ge (001) by high-resolution x-ray reciprocal space mapping"
, in Semiconductor Science and Technology, 1995, ISSN: 0268-1242, J.H. Li, V. Holy, G. Bauer, J.F. Nützel, G. Abstreiter: "Investigation of strain relaxation of Ge1-xSix epilayers on Ge (001) by high-resolution x-ray reciprocal space mapping", Semicond. Sci. Technol. 10, 1621 (1995), ISSN-Number 0268-1242
Original Titel:
Investigation of strain relaxation of Ge1-xSix epilayers on Ge (001) by high-resolution x-ray reciprocal space mapping
Sprache des Titels:
Englisch
Journal:
Semiconductor Science and Technology
Erscheinungsjahr:
1995
Notiz zum Zitat:
J.H. Li, V. Holy, G. Bauer, J.F. Nützel, G. Abstreiter: "Investigation of strain relaxation of Ge1-xSix epilayers on Ge (001) by high-resolution x-ray reciprocal space mapping", Semicond. Sci. Technol. 10, 1621 (1995), ISSN-Number 0268-1242
ISSN:
0268-1242
Publikationstyp:
Aufsatz / Paper in sonstiger referierter Fachzeitschrift
Forschungs-