Gerhard Brunthaler, Wolfgang Jantsch, Gerald Ostermayer, G. Stöger, J. Wöckinger, Z. Wilamowski,
"On the ground state of the DX-centers in AlxGa1-xAs:Si"
: Proc. 20th Int. Conf. on the Physics of Semiconductors, Thessaloniki, Greece, 1990, W. Jantsch, G. Ostermayer, G. Brunthaler, G. Stöger, J. Wöckinger, Z. Wilamowski: "On the ground state of the DX-centers in AlxGa1-xAs:Si", Proc. 20th Int. Conf. on the Physics of Semiconductors, Thessaloniki, Greece, eds. E.M. Anastassakis, J.D. Joannopoulos. World Scientific, Singapore 1990, p. 485.
Original Titel:
On the ground state of the DX-centers in AlxGa1-xAs:Si
Sprache des Titels:
Englisch
Original Buchtitel:
Proc. 20th Int. Conf. on the Physics of Semiconductors, Thessaloniki, Greece
Erscheinungsjahr:
1990
Notiz zum Zitat:
W. Jantsch, G. Ostermayer, G. Brunthaler, G. Stöger, J. Wöckinger, Z. Wilamowski: "On the ground state of the DX-centers in AlxGa1-xAs:Si", Proc. 20th Int. Conf. on the Physics of Semiconductors, Thessaloniki, Greece, eds. E.M. Anastassakis, J.D. Joannopoulos. World Scientific, Singapore 1990, p. 485.