M. Heuken, E. Koppensteiner, T.W. Ryan, J. Söllner,
""Combining four-crystal-seven-reflection and three-crystal-five-reflection diffractometry for the characterization of ZnSe layers grown on GaAs by MOVPE""
, 1993, ISBN: 0022-3727, E. Koppensteiner, T.W. Ryan, M. Heuken, J. Söllner: "Combining four-crystal-seven-reflection and three-crystal-five-reflection diffractometry for the characterization of ZnSe layers grown on GaAs by MOVPE", J. Phys. D: Appl. Phys. 26, 35 (1993), ISSN-Number 0022-3727
Original Titel:
"Combining four-crystal-seven-reflection and three-crystal-five-reflection diffractometry for the characterization of ZnSe layers grown on GaAs by MOVPE"
Sprache des Titels:
Englisch
Englischer Titel:
Combining four-crystal-seven-reflection and three-crystal-five-reflection diffractometry for the characterization of ZnSe layers grown on GaAs by MOVPE
Erscheinungsjahr:
1993
Notiz zum Zitat:
E. Koppensteiner, T.W. Ryan, M. Heuken, J. Söllner: "Combining four-crystal-seven-reflection and three-crystal-five-reflection diffractometry for the characterization of ZnSe layers grown on GaAs by MOVPE", J. Phys. D: Appl. Phys. 26, 35 (1993), ISSN-Number 0022-3727
ISBN:
0022-3727
Anzahl der Seiten:
0
Publikationstyp:
Aufsatz / Paper in sonstiger referierter Fachzeitschrift