Gerhard Brunthaler, K. Köhler, Gerald Ostermayer, M. Seto, G. Stöger,
"Influence of DX center structure on Si modulation d-doping in AlGaAs/GaAs quantum wells"
, in Materials Science Forum, 1994, G. Brunthaler, M. Seto, G. Stöger, G. Ostermayer, K. Köhler: "Influence of DX center structure on Si modulation d-doping in AlGaAs/GaAs quantum wells", 17th International Conference on Defects in Semiconductors, Gmunden, Austria 1993; Materials Science Forum, Vol. 143-147, 641 (1994), Trans Tech Publications, Switzerland.
Original Titel:
Influence of DX center structure on Si modulation d-doping in AlGaAs/GaAs quantum wells
Sprache des Titels:
Englisch
Journal:
Materials Science Forum
Erscheinungsjahr:
1994
Notiz zum Zitat:
G. Brunthaler, M. Seto, G. Stöger, G. Ostermayer, K. Köhler: "Influence of DX center structure on Si modulation d-doping in AlGaAs/GaAs quantum wells", 17th International Conference on Defects in Semiconductors, Gmunden, Austria 1993; Materials Science Forum, Vol. 143-147, 641 (1994), Trans Tech Publications, Switzerland.