Gerhard Brunthaler, Wolfgang Jantsch, K. Köhler, Gerald Ostermayer, G. Stöger, Z. Wilamowski,
"On the electron capture kinetics of DX centers in AlxGa1-xAs:Si"
, in Materials Science Forum, 1994, G. Stöger, G. Brunthaler, G. Ostermayer, W. Jantsch, Z. Wilamowski, K. Köhler: "On the electron capture kinetics of DX centers in AlxGa1-xAs:Si", 17th International Conference on Defects in Semiconductors, Gmunden, Austria 1993; Materials Science Forum 143-147, 1149 (1994), Trans Tech Publications, Switzerland.
Original Titel:
On the electron capture kinetics of DX centers in AlxGa1-xAs:Si
Sprache des Titels:
Englisch
Journal:
Materials Science Forum
Erscheinungsjahr:
1994
Notiz zum Zitat:
G. Stöger, G. Brunthaler, G. Ostermayer, W. Jantsch, Z. Wilamowski, K. Köhler: "On the electron capture kinetics of DX centers in AlxGa1-xAs:Si", 17th International Conference on Defects in Semiconductors, Gmunden, Austria 1993; Materials Science Forum 143-147, 1149 (1994), Trans Tech Publications, Switzerland.
Publikationstyp:
Aufsatz / Paper in sonstiger referierter Fachzeitschrift
Forschungs-