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"1.5um Infrared Photoluminescence Phenomena in Er-Doped Porous Silicon"
, 1-1999, M. Stepikhova, L. Palmetshofer, W. Jantsch: 1.5um Infrared Photoluminescence Phenomena in Er-Doped Porous Silicon, Appl. Phys. Lett. 74, 537 (1999)
Original Titel:
1.5um Infrared Photoluminescence Phenomena in Er-Doped Porous Silicon
Sprache des Titels:
Englisch
Englischer Titel:
1.5um Infrared Photoluminescence Phenomena in Er-Doped Porous Silicon
Englische Kurzfassung:
We analyze the photoluminescence (PL) in nanoporous Si (poSi) doped with Er by electrochemical deposition and by spin-on doping. Two kinds of optically active Er centers appear in electrochemically doped po-Si wth the main sharp and intense lines at 1.548 and 1.539 um, respectively. The features characteristic for the spin-on doping method are: intense dislocation-related PL at 1.53 um and strong luminescent activity of the silica gel used for Er doping. High-temperature PL observed up to 360 K is attributed to Er centers incorporated in the silica-like matrix at the oxidized surface of electrochemically doped po-Si and in erbium-containing silica gel.
Erscheinungsmonat:
1
Erscheinungsjahr:
1999
Notiz zum Zitat:
M. Stepikhova, L. Palmetshofer, W. Jantsch: 1.5um Infrared Photoluminescence Phenomena in Er-Doped Porous Silicon, Appl. Phys. Lett. 74, 537 (1999)
Anzahl der Seiten:
3
Publikationstyp:
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