Margarita V. Stepikhova, Leopold Palmetshofer, Wolfgang Jantsch, H. J. von Bardeleben, N. V. Gaponenko,
"1.5 ?m infrared photoluminescence phenomena in Er-doped porous silicon"
, in Applied Physics Letters, Vol. 74, Seite(n) 537-539, 1-1999, M. Stepikhova, L. Palmetshofer, W. Jantsch: 1.5um Infrared Photoluminescence Phenomena in Er-Doped Porous Silicon, Appl. Phys. Lett. 74, 537 (1999)
Original Titel:
1.5 ?m infrared photoluminescence phenomena in Er-doped porous silicon
Sprache des Titels:
Englisch
Englische Kurzfassung:
We analyze the photoluminescence (PL) in nanoporous Si (poSi) doped with Er by electrochemical deposition and by spin-on doping. Two kinds of optically active Er centers appear in electrochemically doped po-Si wth the main sharp and intense lines at 1.548 and 1.539 um, respectively. The features characteristic for the spin-on doping method are: intense dislocation-related PL at 1.53 um and strong luminescent activity of the silica gel used for Er doping. High-temperature PL observed up to 360 K is attributed to Er centers incorporated in the silica-like matrix at the oxidized surface of electrochemically doped po-Si and in erbium-containing silica gel.
Journal:
Applied Physics Letters
Volume:
74
Seitenreferenz:
537-539
Erscheinungsmonat:
1
Erscheinungsjahr:
1999
Notiz zum Zitat:
M. Stepikhova, L. Palmetshofer, W. Jantsch: 1.5um Infrared Photoluminescence Phenomena in Er-Doped Porous Silicon, Appl. Phys. Lett. 74, 537 (1999)
Forschungs-