,
"The Comparison of Oxygen and Hydrogen Gettering at High-Temperature Post-Implantation Annealing of Hydrogen and Helium-Implanted Czochralski Silicon"
, 1998, R. Job, W.R. Fahrner, A. Ulyashin, L. Palmetshofer: The Comparison of Oxygen and Hydrogen Gettering at High-Temperature Post-Implantation Annealing of Hydrogen and Helium-Implanted Czochralski Silicon, Mat. Res. Soc. proc. Vol. 510 (1998)
Original Titel:
The Comparison of Oxygen and Hydrogen Gettering at High-Temperature Post-Implantation Annealing of Hydrogen and Helium-Implanted Czochralski Silicon
Sprache des Titels:
Englisch
Englischer Titel:
The Comparison of Oxygen and Hydrogen Gettering at High-Temperature Post-Implantation Annealing of Hydrogen and Helium-Implanted Czochralski Silicon
Erscheinungsjahr:
1998
Notiz zum Zitat:
R. Job, W.R. Fahrner, A. Ulyashin, L. Palmetshofer: The Comparison of Oxygen and Hydrogen Gettering at High-Temperature Post-Implantation Annealing of Hydrogen and Helium-Implanted Czochralski Silicon, Mat. Res. Soc. proc. Vol. 510 (1998)
Publikationstyp:
Aufsatz / Paper in sonstiger referierter Fachzeitschrift
Forschungs-