R. Job, W. R. Fahrner, A. I. Ivanovo, Leopold Palmetshofer, A. Ulyashin,
"Comparison of Oxygen and Hydrogen Gettering at High-Temperature Post-Implantation Annealing of Hydrogen and Helium Implanted Czochralski Silicon"
, in MRS Online Proceedings Library (OPL), Vol. 510, Seite(n) 425-430, 1998, R. Job, W.R. Fahrner, A. Ulyashin, L. Palmetshofer: The Comparison of Oxygen and Hydrogen Gettering at High-Temperature Post-Implantation Annealing of Hydrogen and Helium-Implanted Czochralski Silicon, Mat. Res. Soc. proc. Vol. 510 (1998)
Original Titel:
Comparison of Oxygen and Hydrogen Gettering at High-Temperature Post-Implantation Annealing of Hydrogen and Helium Implanted Czochralski Silicon
Sprache des Titels:
Englisch
Journal:
MRS Online Proceedings Library (OPL)
Volume:
510
Seitenreferenz:
425-430
Erscheinungsjahr:
1998
Notiz zum Zitat:
R. Job, W.R. Fahrner, A. Ulyashin, L. Palmetshofer: The Comparison of Oxygen and Hydrogen Gettering at High-Temperature Post-Implantation Annealing of Hydrogen and Helium-Implanted Czochralski Silicon, Mat. Res. Soc. proc. Vol. 510 (1998)