A. Ulyashin, Yu. A. Bumay, W. R. Fahrner, A. I. Ivanovo, R. Job, Leopold Palmetshofer,
"Oxygen Gettering and Thermal Donor Formation at Post-implantation Annealing of Hydrogen-implanted Czochralsky Silicon"
, in T.Diaz de la Rubia, S. Coffa, C.S. Rafferty, P.A. Stolk: Symposium E ? Defects and Diffusion in Silicon Processing, Serie MRS Online Proceedings Library (OPL), Vol. 469, 1997, A.G. Ulyashin, Yu.A. Bumay, W.R. Fahrner, A.I. Ivanov, R. Job, L. Palmetshofer:Oxygen Gettering and Thermal Donor Formation at Post-implantation Annealing of Hydrogen-implanted Czochralsky Silicon; Mat. Res. Soc. Proc. Vo. 469 (1997)
Original Titel:
Oxygen Gettering and Thermal Donor Formation at Post-implantation Annealing of Hydrogen-implanted Czochralsky Silicon
Sprache des Titels:
Englisch
Original Buchtitel:
Symposium E ? Defects and Diffusion in Silicon Processing
Serie:
MRS Online Proceedings Library (OPL)
Volume:
469
Erscheinungsjahr:
1997
Notiz zum Zitat:
A.G. Ulyashin, Yu.A. Bumay, W.R. Fahrner, A.I. Ivanov, R. Job, L. Palmetshofer:Oxygen Gettering and Thermal Donor Formation at Post-implantation Annealing of Hydrogen-implanted Czochralsky Silicon; Mat. Res. Soc. Proc. Vo. 469 (1997)