Y. Suprun-Belevich, Leopold Palmetshofer,
"Effect of Ge-related Mechanical Strain on Defect and Impurity Behaviour in Ion-implanted Silicon"
, in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and, Vol. 106, Nummer 1-4, Seite(n) 262-266, 1995, Yu. Suprun-Belevich, L. Palmetshofer:Effect of Ge-related Mechanical Strain on Defect and Impurity Behaviour in Ion-implanted Silicon, Nucl. Instr. Methods B 106, 262 (1995)
Original Titel:
Effect of Ge-related Mechanical Strain on Defect and Impurity Behaviour in Ion-implanted Silicon
Sprache des Titels:
Englisch
Journal:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and
Volume:
106
Number:
1-4
Seitenreferenz:
262-266
Erscheinungsjahr:
1995
Notiz zum Zitat:
Yu. Suprun-Belevich, L. Palmetshofer:Effect of Ge-related Mechanical Strain on Defect and Impurity Behaviour in Ion-implanted Silicon, Nucl. Instr. Methods B 106, 262 (1995)
Forschungs-