Andreas Springer, Christian Diskus, Kurt Lübke, Andreas Stelzer, Hartwig Thim,
"Transferred electron effect on AlGaAs/GaAs multi-quantum-well structure"
: Proc. 1997 of the 27th European Solid-State Device Research Conference (ESSDERC 97), Seite(n) 296-299, 1997, ISBN: 2-86332-221-4, European Solid-State Device Research Conference, Stuttgart, 22-24 Sept. 1997
Original Titel:
Transferred electron effect on AlGaAs/GaAs multi-quantum-well structure
Sprache des Titels:
Englisch
Original Buchtitel:
Proc. 1997 of the 27th European Solid-State Device Research Conference (ESSDERC 97)
Original Kurzfassung:
The use of an AlGaAs/GaAs multi-quantum-well structure as an active layer for a planar injection limited TED is proposed to enhance the efficiency of the device. Monolithically integrated 60GHz GaAs TED-oscillators have been febricated and showed an efficiency of about 1.6% with an associated output power of 6.5mW which is an improvement of about 29% compared to homogeneousely doped devices. To our knowledge this is the first observation of the transferred electron effect occuring in a quantum-well structure.
Sprache der Kurzfassung:
Englisch
Seitenreferenz:
296-299
Erscheinungsjahr:
1997
Notiz zum Zitat:
European Solid-State Device Research Conference, Stuttgart, 22-24 Sept. 1997