G. Otto, Leopold Palmetshofer, P. Pongratz, G. Hobler,
"Is there an influence of ion-beam-induced interfacial amorphization on the a/c-interface depth in silicon at common implantation energies?"
, in Nuclear Instruments and Methods in Physics Research Section B, Vol. 253, Seite(n) 227-231, 2006, ISSN: 1872-9584
Original Titel:
Is there an influence of ion-beam-induced interfacial amorphization on the a/c-interface depth in silicon at common implantation energies?
Sprache des Titels:
Englisch
Journal:
Nuclear Instruments and Methods in Physics Research Section B