Zhenyang Zhong, O. Ambacher, A. Link, Vaclav Holy, Julian Stangl, Rainer T. Lechner, T. Roch, Günther Bauer,
"Influence of GaN domain size on the electron mobility of two-dimensional electron gases in AlGaN/GaN heterostructures determined by x-ray reflectivity and diffraction"
, in Applied Physics Letters, Vol. 80, Seite(n) 3521-3523, 5-2002, Z. Zhong, O. Ambacher, A. Link, V. Holy, J. Stangl, R.T. Lechner, T. Roch, G. Bauer: Influence of GaN domain size on the electron mobility of two-dimensional electron gases in AlGaN/GaN heterostructures determined by x-ray reflectivity and diffraction, Appl. Phys. Lett. 80, 3521-3523 (2002).
Original Titel:
Influence of GaN domain size on the electron mobility of two-dimensional electron gases in AlGaN/GaN heterostructures determined by x-ray reflectivity and diffraction
Sprache des Titels:
Englisch
Journal:
Applied Physics Letters
Volume:
80
Seitenreferenz:
3521-3523
Erscheinungsmonat:
5
Erscheinungsjahr:
2002
Notiz zum Zitat:
Z. Zhong, O. Ambacher, A. Link, V. Holy, J. Stangl, R.T. Lechner, T. Roch, G. Bauer: Influence of GaN domain size on the electron mobility of two-dimensional electron gases in AlGaN/GaN heterostructures determined by x-ray reflectivity and diffraction, Appl. Phys. Lett. 80, 3521-3523 (2002).
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