V. G. Shengurov, S.P. Svetlov, V.Yu. Chalkov, G.A. Maksimov, Z. F. Krasilnik, B.A. Andreev, Margarita V. Stepikhova, Leopold Palmetshofer, Heinz J. Ellmer,
"Influence of the growth conditions on the building in processes of rare earth doping elements in silicon layer during the molecular beam epitaxy"
: Proc. Russ. Acad. Sciences, Ser. of Physics, Vol. 65, Seite(n) 289-291, 2001, V.G. Shengurov, S.P. Svetlov, V.Yu. Chalkov, G.A. Maksimov, Z.F. Krasil'nik, B.A. Andreev, M.V. Stepikhova, L. Palmetshofer, H. Ellmer: Influence of the growth condition on building-up processes of rare earth dopants in silicon layers during molecular beam epitaxy Proc. Russ. Acad. Sciences, Ser. of Physics 65, 289 (2001)
Original Titel:
Influence of the growth conditions on the building in processes of rare earth doping elements in silicon layer during the molecular beam epitaxy
Sprache des Titels:
Englisch
Original Buchtitel:
Proc. Russ. Acad. Sciences, Ser. of Physics
Volume:
65
Seitenreferenz:
289-291
Erscheinungsjahr:
2001
Notiz zum Zitat:
V.G. Shengurov, S.P. Svetlov, V.Yu. Chalkov, G.A. Maksimov, Z.F. Krasil'nik, B.A. Andreev, M.V. Stepikhova, L. Palmetshofer, H. Ellmer: Influence of the growth condition on building-up processes of rare earth dopants in silicon layers during molecular beam epitaxy Proc. Russ. Acad. Sciences, Ser. of Physics 65, 289 (2001)
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