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"Influence of the growth condition on building-up processes of rare earth dopants in silicon layers during molecular beam epitaxy"
, 2001, V.G. Shengurov, S.P. Svetlov, V.Yu. Chalkov, G.A. Maksimov, Z.F. Krasil'nik, B.A. Andreev, M.V. Stepikhova, L. Palmetshofer, H. Ellmer: Influence of the growth condition on building-up processes of rare earth dopants in silicon layers during molecular beam epitaxy Proc. Russ. Acad. Sciences, Ser. of Physics 65, 289 (2001)
Original Titel:
Influence of the growth condition on building-up processes of rare earth dopants in silicon layers during molecular beam epitaxy
Sprache des Titels:
Russisch
Englischer Titel:
Influence of the growth condition on building-up processes of rare earth dopants in silicon layers during molecular beam epitaxy
Erscheinungsjahr:
2001
Notiz zum Zitat:
V.G. Shengurov, S.P. Svetlov, V.Yu. Chalkov, G.A. Maksimov, Z.F. Krasil'nik, B.A. Andreev, M.V. Stepikhova, L. Palmetshofer, H. Ellmer: Influence of the growth condition on building-up processes of rare earth dopants in silicon layers during molecular beam epitaxy Proc. Russ. Acad. Sciences, Ser. of Physics 65, 289 (2001)
Publikationstyp:
Aufsatz / Paper in sonstiger referierter Fachzeitschrift
Forschungs-