V. G. Shengurov, S.P. Svetlov, V.Yu. Chalkov, G.A. Maksimov, Z. F. Krasilnik, B.A. Andreev, Margarita V. Stepikhova, Leopold Palmetshofer, Heinz Ellmer,
"Influence of the growth conditions on the building in processes of rare earth doping elements in silicon layer during the molecular beam epitaxy"
: Proc. Russ. Acad. Sciences, Ser. of Physics, Vol. 65, Seite(n) 289-291, 2001, V.G. Shengurov, S.P. Svetlov, V.Yu. Chalkov, G.A. Maksimov, Z.F. Krasil'nik, B.A. Andreev, M.V. Stepikhova, L. Palmetshofer, H. Ellmer: Influence of the growth condition on building-up processes of rare earth dopants in silicon layers during molecular beam epitaxy Proc. Russ. Acad. Sciences, Ser. of Physics 65, 289 (2001)
Original Titel:
Influence of the growth conditions on the building in processes of rare earth doping elements in silicon layer during the molecular beam epitaxy
Sprache des Titels:
Englisch
Original Buchtitel:
Proc. Russ. Acad. Sciences, Ser. of Physics
Volume:
65
Seitenreferenz:
289-291
Erscheinungsjahr:
2001
Notiz zum Zitat:
V.G. Shengurov, S.P. Svetlov, V.Yu. Chalkov, G.A. Maksimov, Z.F. Krasil'nik, B.A. Andreev, M.V. Stepikhova, L. Palmetshofer, H. Ellmer: Influence of the growth condition on building-up processes of rare earth dopants in silicon layers during molecular beam epitaxy Proc. Russ. Acad. Sciences, Ser. of Physics 65, 289 (2001)
Forschungs-