R. Job, A. Ulyashin, W. R. Fahrner, A. I. Ivanovo, Leopold Palmetshofer,
"Oxygen and Hydrogen accumulation at buried implantation-damage layers in Hydrogen- and Helium-implanted Czochralski Silicon"
, in Applied Physics A, Vol. 72, Seite(n) 325?332, 2001, R. Job, A.G. Ulyashin, W.R. Fahrner, A.I. Ivanov, L. Palmetshofer: Oxygen and Hydrogen accumulation at buried implantation-damage layers in Hydrogen- and Helium-implanted Czochralski Silicon Appl. Phys. A 72, 325 (2001)
Original Titel:
Oxygen and Hydrogen accumulation at buried implantation-damage layers in Hydrogen- and Helium-implanted Czochralski Silicon
Sprache des Titels:
Englisch
Journal:
Applied Physics A
Volume:
72
Seitenreferenz:
325?332
Erscheinungsjahr:
2001
Notiz zum Zitat:
R. Job, A.G. Ulyashin, W.R. Fahrner, A.I. Ivanov, L. Palmetshofer: Oxygen and Hydrogen accumulation at buried implantation-damage layers in Hydrogen- and Helium-implanted Czochralski Silicon Appl. Phys. A 72, 325 (2001)
Forschungs-