,
"Oxygen and Hydrogen accumulation at buried implantation-damage layers in Hydrogen- and Helium-implanted Czochralski Silicon"
, 2001, R. Job, A.G. Ulyashin, W.R. Fahrner, A.I. Ivanov, L. Palmetshofer: Oxygen and Hydrogen accumulation at buried implantation-damage layers in Hydrogen- and Helium-implanted Czochralski Silicon Appl. Phys. A 72, 325 (2001)
Original Titel:
Oxygen and Hydrogen accumulation at buried implantation-damage layers in Hydrogen- and Helium-implanted Czochralski Silicon
Sprache des Titels:
Englisch
Englischer Titel:
Oxygen and Hydrogen accumulation at buried implantation-damage layers in Hydrogen- and Helium-implanted Czochralski Silicon
Erscheinungsjahr:
2001
Notiz zum Zitat:
R. Job, A.G. Ulyashin, W.R. Fahrner, A.I. Ivanov, L. Palmetshofer: Oxygen and Hydrogen accumulation at buried implantation-damage layers in Hydrogen- and Helium-implanted Czochralski Silicon Appl. Phys. A 72, 325 (2001)
Publikationstyp:
Aufsatz / Paper in sonstiger referierter Fachzeitschrift
Forschungs-