G. Abstreiter, Günther Bauer, K. Brunner, A. Daniel, Vaclav Holy, Till Hartmut Metzger, T. Roch, Julian Stangl, J. Zhu,
"Shape and size of buried SiGe islands"
: Proc. 25th International Conference on the Physics of Semiconductors, Sept. 2000, Osaka, Japan, Seite(n) 363-364, 2001, J. Stangl, V. Holy, A. Daniel, T. Roch, G. Bauer, T. H. Metzger, J. Zhu, K. Brunner, G. Abstreiter: Shape and size of buried SiGe islands, Proc. 25th International Conference on the Physics of Semiconductors, Sept. 2000, Osaka, Japan, edited by N. Miura, T. Ando, Berlin Heidelberg new York, Springer 2001, p. 363-364.
Original Titel:
Shape and size of buried SiGe islands
Sprache des Titels:
Englisch
Original Buchtitel:
Proc. 25th International Conference on the Physics of Semiconductors, Sept. 2000, Osaka, Japan
Seitenreferenz:
363-364
Erscheinungsjahr:
2001
Notiz zum Zitat:
J. Stangl, V. Holy, A. Daniel, T. Roch, G. Bauer, T. H. Metzger, J. Zhu, K. Brunner, G. Abstreiter: Shape and size of buried SiGe islands, Proc. 25th International Conference on the Physics of Semiconductors, Sept. 2000, Osaka, Japan, edited by N. Miura, T. Ando, Berlin Heidelberg new York, Springer 2001, p. 363-364.
Forschungs-