Y. Zhuang, Vaclav Holy, Julian Stangl, Stefan Zerlauth, Friedrich Schäffler, Günther Bauer, U. Pietsch, N. Darowski,
"Inhomogeneous strain relaxation in dry etched Si/SiGe wires: a high resolution x-ray diffraction study"
, in Physical Review B, 2000, Y. Zhuang, V. Holy, J. Stangl, S. Zerlauth, F. Sch
ffler, G. Bauer, U. Pietsch, N. Darowski: "Inhomogeneous strain relaxation in dry etched Si/SiGe wires: a high resolution x-ray diffraction study", Phys. Rev. B, submitted.
Original Titel:
Inhomogeneous strain relaxation in dry etched Si/SiGe wires: a high resolution x-ray diffraction study
Sprache des Titels:
Englisch
Journal:
Physical Review B
Erscheinungsjahr:
2000
Notiz zum Zitat:
Y. Zhuang, V. Holy, J. Stangl, S. Zerlauth, F. Sch
ffler, G. Bauer, U. Pietsch, N. Darowski: "Inhomogeneous strain relaxation in dry etched Si/SiGe wires: a high resolution x-ray diffraction study", Phys. Rev. B, submitted.
Reichweite:
international
Publikationstyp:
Aufsatz / Paper in sonstiger referierter Fachzeitschrift
Forschungs-