A high linearity LNA with modified resistor biasing
Sprache des Vortragstitels:
Englisch
Original Tagungtitel:
2009 Asia-Pacific Microwave Conference
Sprache des Tagungstitel:
Englisch
Original Kurzfassung:
A 2GHz SiGe:C HBT low noise amplifier (LNA)
with improved gain compression and linearity performance is
described. A modified resistor bias feed circuit for the LNA
transistor improves its intermodulation and compression
behavior compared to a conventional resistor bias feed circuit.
Linearity enhancement is achieved by a simple feedback
between the base of the current mirror transistor and the LNA
transistor decreasing the low frequency bias termination. The
manufactured LNA shows an IIP3 improvement of more than 6
dB and a P1dB improvement of around 4 dB compared to a
conventional resistor bias feed circuit.
Sprache der Kurzfassung:
Englisch
Vortragstyp:
Vortrag auf einer Tagung (referiert)
Vortragsdatum:
09.12.2009
Vortragsort:
Singapur
Details zum Vortragsort:
Asia - Pacific Microwave Conference 2009 (APMC 2009) SUNTEC Singapore International Convention & Exhibition Centre
Forschungs-