Spin-orbit coupling of color centers for quantum applications
Sprache des Vortragstitels:
Englisch
Original Tagungtitel:
DPG Spring Meeting of the Condensed Matter Section (SKM) 2024
Sprache des Tagungstitel:
Englisch
Original Kurzfassung:
Color centers in semiconductors, such as the NV-center in diamond, the silicon vacancy (VSi?), and the di-vacancy (VCVSi) in 4H-silicon carbide (4H-SiC), are potential candidates for quantum bits (qubits). Manipulating the spin optically involves exciting the fundamental high-spin multiplet and intersystem crossing (ISC), which includes spin-orbit, spin-spin, and spin-phonon couplings. These interactions, together with the zero-field splitting of ground and excited states, enable diverse spin-photon protocols. To optimize the engineering of such interfaces, a comprehensive understanding of spin-selective interactions and resulting spin-relaxation pathways is crucial. Recent experiments regarding the VSi? in SiC have revealed spin-dependent lifetimes and intercrossing rates using an effective model that considers only one or two out of the five predicted intermediate states [1]. Here we address this issue. We employ our extended CI-cRPA approach for correlated defect states [2] to calculate the spin-orbit and spin-spin coupling. We present a fine structure of the quartet states of VSi? consistent with existing literature. Based on our calculations, we discuss the ISC and spin-relaxation paths.
[1] N. Morioka et al.Phys. Rev. Appl. 17 054005 (2022).
[2] M. Bockstedte, et al., npj Quant Mater 3, 31 (2018).
Forschungs-