Temperature dependent exciton dynamics in GaAs quantum dots
Sprache des Vortragstitels:
Englisch
Original Tagungtitel:
International workshop on engineering of quantum emitter properties
Sprache des Tagungstitel:
Englisch
Original Kurzfassung:
Epitaxially grown semiconductor quantum dots have shown to be one of the best performing single-photon emitters in the solid-state. Here, the best results have been achieved at a temperature of around 4 K, where the excitonic transitions can well be modeled by a two-level system. However, with higher temperatures the two-level model fails to describe the exciton decay dynamics accurately, which is attributed to a phonon mediated intermediate population of energetically close states. Still, the full mechanism behind the change in decay dynamics is not fully understood, and an inspection using resonance fluorescence could improve the currently used model. This might then be beneficial in fabricating quantum dots suitable for higher temperature operation using Stirling coolers. In this work, we show temperature dependent decay dynamics measurements of the neutral exciton and trion under different excitation and photon collection conditions. These measurements can act as a basis to further understand the mechanisms at play when the temperature is increased and the effects they have on photon indistinguishability.
Forschungs-