Optical properties of vacancy-related qubit centers in SiC
Sprache des Vortragstitels:
Englisch
Original Tagungtitel:
Materials Research Society, MRS Springmeeting 2022
Sprache des Tagungstitel:
Englisch
Original Kurzfassung:
Several defectcenters in silicon carbid represent quantum bits forapplications like quantumsensing or can be employed as single photon emitters. Theexcited defect statesand the photons emitted in transitions between them and thegroundstatealongside spin-selective, non-radiative transitions viaintermediate low-spinstates are pivotal parts of the mechanism underlying qubitapplications.Optical excitation of the qubit may also lead to an ionizationinto othercharge states in which the qubit is silent. The ability tocontrol anddeliberately switch the charge state is pivotal forapplications and hasrecently been explored experimentally for qubit centers in SiC[1, 2]. However, thecharge states actually involved inthe switching and their optical properties are often notclear. Furthermore theelectrical detection of spin states, as demonstrated for theNV-center indiamond[3], involves emission ofdefect spins into the conduction or valence band in atwo-photon process. Howthe optical ionization yield and the spin contrast depend onthe photon energyis an open question.....
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