Light-Emitting Devices Based on Defect-Enhanced Group-IV Nanostructures
Sprache des Vortragstitels:
241st ECS Meeting, May 29 ? June 2, 2022
Sprache des Tagungstitel:
Combining Si-based integrated optics with Si-based microelectronics is crucial for next-generation applications ranging from data transfer on short distances to sensing and, potentially, to quantum cryptography at telecom wavelengths. However, Si's intrinsically poor light-emitting properties, i.e., its indirect energy bandgap, inhibit a straightforward implementation of telecom devices such as light-emitting diodes and lasers operating at room temperature.
We argue that adding Ge heterostructures, nanostructures, intentionally-induced defects, and defects within nanostructures to the Si platform can be a viable way to overcome the limitations of Si as a light-emitting material . Significant progress for light-emission from group-IV nanostructures can be achieved by intentionally incorporating extended point defects inside the QDs upon in-situ low-energy ion implantation ,. This work discusses the superior light-emission properties from such defect-enhanced quantum dots (DEQDs) and our present understanding of their structural formation and light-emission mechanisms , indicating that optically direct recombination paths play a role in room-temperature light emission.
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