A 0.5-V 180-nm CMOS Switched-Capacitor Temperature Sensor With 319 nJ/measurement
Sprache des Vortragstitels:
Englisch
Original Tagungtitel:
NEWCAS 2019
Sprache des Tagungstitel:
Englisch
Original Kurzfassung:
In this paper an ultra-low-power switched-capacitor
(SC) temperature sensor realized in a 180nm CMOS process is
introduced. The sensor is operational at supply voltages down
to 0.5V, equivalent to the threshold voltages of the available
MOS transistors. Using bipolar transistors for reference and
temperature dependent voltage generation in a SC band-gap
core, the overall temperature sensor is formed by a combination
of the band-gap with a time-discrete pseudo-differential singleslope
analog-to-digital converter. The temperature sensor has a
power consumption of 2.62?W (4.56?W) including all biasing
and clock generation at supply voltages of 0.5V (0.8V), and
achieves an estimated 3sigma accuracy of 2.42°C (1.36°C) using
a two-point trim for the temperature range of 10°C to 100°C
(?20°C to 100°C). Besides the temperature sensing functionality,
the presented circuitry additionally provides a 24kHz clock signal
and stable reference voltage for other circuit blocks.