Latency, power dissipation and bandwidth have become severe, performance-limiting issues of highly integrated CMOS devices. Optical interconnects are discussed as a possible solution to these problems for quite some time. Meanwhile, most of the essential optical components, such as wave guides, modulators, multiplexers and detectors were developed in a Si-based, fully CMOS-compatible technology. What is missing, however, is a light source that can be integrated monolithically. Several hybrid solutions involving III-V laser sources have been demonstrated, but a light source based on group-IV materials could have substantial technological advantages.
This seminar talk will provide an overview of the basic problems of group-IV semiconductors regarding efficient light emission, and will discuss several recent approaches toward direct-gap group-IV materials. The main emphasis will be put on SiGe quantum dots, their deterministic embedding into photonic crystal resonators and the substantial enhancement of their emission properties by the controlled introduction of split-interstitial defects.
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Eingeladener Vortrag an Universität
Details zum Vortragsort:
Princeton University, Department of Electrical Engineering