Quantum Dot Microcavity Lasers based on Epitaxial PbTe Dots Embedded in CdTe with 3.7 ?m CW Mode Emission
Sprache des Vortragstitels:
MIOMD-XI Infrared Optoelectronics: Materials and Devices September 4th ? 8th, 2012, Chicago, USA
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Summary: The first mid-infrared quantum dot lasers are demonstrated, fabricated from the PbTe/CdTe quantum dot system. The quantum dots are produced by a novel strain-free synthesis method, resulting in highly symmetric QDs without any 2D wetting layer on GaAs substrates. Due to the very large difference in band gaps, PbTe/CdTe QDs display strong MIR emission at room temperature and a wide wavelength tunability from ?c= 1.4 to 4 µm by control of the dot size. Free-standing microdisk structures show cw mid-infrared laser emission between 4.7 to 3.7 µm wavelength up to 200 K, and pulsed mode emission up to room temperature.