Giant Ge surface diffusion length and stable island sizes during the nucleation of SiGe islands on patterned and planar Si(001) substrates
Sprache des Vortragstitels:
Englisch
Original Tagungtitel:
XIVth International Biannual Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2011), Loipersdorf (Fürstenfeld), Austria, September 25-30, 2011