Morphological phase transition for pure Ge and diluted Si1-xGex ripples on Si (1 1 10) substrate
Sprache des Vortragstitels:
Englisch
Original Tagungtitel:
XIVth International Biannual Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2011), Loipersdorf (Fürstenfeld), Austria, September 25-30, 2011