Characterization of Siliconcarbonitride bonding layer for plasma activated direct fusion bonding
Sprache des Titels:
Englisch
Original Kurzfassung:
In the scope of this work, a comprehensive study of plasma treated Silicon carbonitride (SiCN) dielectric bonding surfaces on Si wafers is presented. PECVD grown films were investigated by means of variable angle spectroscopic ellipsometry (VASE) and angle-resolved x-ray photoelectron spectroscopy (ARXPS) before and after plasma activation. Based on ARXPS depth-profiling data, an ellipsometry model was developed, allowing for non-destructive characterization of the plasma effect on the SiCN bonding surfaces. Oxidation processes and intermediate mixture phase layers between the grown oxide and the SiCN layer were observed and correlated to plasma specific characteristics as measured by current-voltage probes. The plasma activation effect was further evaluated after bonding of SiCN wafer pairs in terms of bonding energy. Plasma characteristic parameters correlate well with oxide thickness after plasma activation and bonding energy.
Forschungs-