Ultrathin Germanium and Silicon-Germanium Nanosheet Transistors for Runtime Reconfigurable Electronics
Sprache des Titels:
Englisch
Original Buchtitel:
2023 IEEE Nanotechnology Materials and Devices Conference (NMDC)
Original Kurzfassung:
Reconfigurable field effect transistors (RFET)
merge the functionality of p- and n-type field effect transistors
at runtime upon the application of a dedicated control voltage.
More recently additional functionality, like negative differential
resistance has been able to be added to RFETs. Although a
higher complexity in steering the devices is given a set of novel
circuits and systems has been developed, that not only cope with
the signal overhead, but make efficient use of the functionality
enhancement to allow for circuit topologies and applications
that have been so-far hindered with conventional CMOS.
Measures to enhance the device performance and reduce
operation power have been identified and predicted by theory,
including the replacement of Si channels by Ge and SixGe1-x.
The recent advancements and prospects in this field is reviewed
and analyzed.
Sprache der Kurzfassung:
Englisch
Serie:
2023 IEEE Nanotechnology Materials and Devices Conference (NMDC) October 22-25 2023. Paestum (Salern
Forschungs-