Copper-Oxide Reduction for Low-Temperature Wafer Bonding
Sprache des Titels:
Englisch
Original Kurzfassung:
Silicon wafers with a 500 nm sputtered Cu layer
were successfully bonded at low temperatures of 175°C for 30 min
in forming gas. Auger electron spectroscopy (AES) and
transmission electron microscopy (TEM) were used for oxide
detection and microstructure imaging.
Forschungs-