Mufid Radaoui, A. Ben Fredj, Samir Romdhane, Daniel Ayuk Mbi Egbe, H. Bouchriha,
"Annealing temperature dependence of the performance of bulk heterojunction polymer: Fullerene solar cells under short and open circuit conditions"
, in Synthetic Metals, Vol. 271, Elsevier B.V., 1-2021, ISSN: 0379-6779
Original Titel:
Annealing temperature dependence of the performance of bulk heterojunction polymer: Fullerene solar cells under short and open circuit conditions
Sprache des Titels:
Englisch
Original Kurzfassung:
The current density-voltage(J-V) characteristics and cole-cole impedance plots (-Im(Z) vs Re(Z)) of ITO/PEDOT:
PSS/AnE-PVab:PCBM/Ca/Ag solar cells were measured under thermal annealing range 25?125 ?C using AM
1.5 G (80 mW/cm2) solar simulator (white light). The fill factors (FF), the short-circuit current density (JSC) and
the open-circuit voltage (VOC) initially increased up to 110 ?C and then decayed considerably for higher
annealing temperatures. Under short circuit conditions at 0 V DC, The Cole-Cole plots demonstrate an increase in
the semicircle radius for devices annealed at 25 ?C and 100 ?C. Then, the semicircle radii decrease with
increasing annealing temperatures from 105 ?C and above. However, at VOC conditions, we observe that the
semicircle radii increase with increasing the thermal annealing. To reproduce theoretically the observed colecole
impedance plots at 0 V DC and VOC conditions for different annealing temperatures, we used an equivalent
circuit in the framework of the transmission line model, incorporating the chemical capacitance (C?), the
recombination resistance (Rrec), the transport resistance (Rt) and the contact electrical resistance (Rco). We
determined the diffusion time (?dif ), the recombination time (?rec), the diffusion length (Ln) at 0 V DC and VOC
voltages. At VOC voltage, average mobility of global carriers for the device is around 4 10?? 3 cm2V?? 1s?? 1 , which is
in good agreement with that derived using PCBM electron-only devices.