Modeling Non-Idealities of Capacitive RF-DACs with a Switched State-Space Model
Sprache des Titels:
Proceedings of the International Symposium on Circuits and Systems (ISCAS 2019)
This paper presents extensions to the switched statespace
modeling approach for capacitive RF-DACs. In contrast to
other state-of-the-art behavioral models for nonlinear devices, the state-space representation allows for inclusion of the dominant non-idealities of the capacitive RF-DAC, while maintaining the original benefits of low computational effort and low simulation run times. In this work, the inclusion of capacitor variations, supply voltage variations, and local oscillator phase noise into the switched state-space model is demonstrated and verified.