J. Krempaský, Gunther Springholz, J. Minar, J. H. Dil,
"?-GeTe and (GeMn)Te semiconductors: A new paradigm for spintronics"
, in Jozef Sitek, Jan Vaida, Igor Jamnicky: AIP Conference Proceedings: APPLIED PHYSICS OF CONDENSED MATTER (APCOM 2018), ?trbské Pleso, High Tatras, Slovak Republic, 20-22 June 2018, Vol. 1996, AIP Publishing, Seite(n) 020026, 2018
?-GeTe and (GeMn)Te semiconductors: A new paradigm for spintronics
Sprache des Titels:
AIP Conference Proceedings: APPLIED PHYSICS OF CONDENSED MATTER (APCOM 2018), ?trbské Pleso, High Tatras, Slovak Republic, 20-22 June 2018
GeTe is the simplest known binary ferroelectric semiconductor with a narrow band gap. Below 700?K it assumes a non-centrosymmetric rhombohedral structure in which an electric dipole is formed due to a relative Ge/Te sublattice displacement along the  direction. Ferroelectric polarization results from asymmetric positions of Ge and Te atoms along that direction and ensures that the system possess a well-defined axis for symmetry breaking, resulting in a giant Rashba-type spin splitting of the bulk band structure. We report on first-principle calculations which indicate that the large lattice distortion responsible for the ferroelectric order is also the most significant ingredient for the giant Rashba-type spin-splitting. We review the experimental verification of this giant Rashba-type splitting and show the main results proving that (GeMn)Te is a new paradigm multiferroic semiconductor with magnetoelectic properties, offering broad opportunities for spintronics materials design.