"Molecular Beam Epitaxy of IV?VI Semiconductors: Fundamentals, Low-dimensional Structures, and Device Applications"
, in Mohamed Henini: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Serie Chapter 11, Elsevier, Seite(n) 211-276, 2018, ISBN: 978-0-12-812136-8
Molecular Beam Epitaxy of IV?VI Semiconductors: Fundamentals, Low-dimensional Structures, and Device Applications
Sprache des Titels:
Molecular Beam Epitaxy (MBE): From Research to Mass Production
Molecular beam epitaxy of IV?VI semiconductor multilayers, quantum dots (QD), and device applications are described. The properties of the IV?VI compounds differ in several respects from zinc blende III?V or II?VI semiconductors. This has significant consequences on the growth processes of molecular beam epitaxy as well as for the electronic properties of quantum wells and superlattices. QDs can be obtained by the Stranski?Krastanov growth mode as well as by epitaxial phase separation and nanoprecipitation. In the first case, excellent three-dimensional ordering and stacking of QDs in superlattices can be achieved due to the high elastic anisotropy, leading to the formation of three-dimensional QD crystals. In the second case, strong mid-infrared emission of QDs at room temperature has been obtained that is tunable over a wide spectral region. The main application of IV?VI or lead salt compounds is in mid-infrared optoelectronic devices, and examples for diode lasers, vertical cavity surface-emitting laser, and microdisc lasers are described.