Large tunneling anisotropic magnetoresistance mediated by surface states
Sprache des Titels:
We investigate the tunneling anisotropic magnetoresistance (TAMR) in thick hcp Co films at cryogenic
temperatures using scanning tunnelingmicroscopy. At around?350 mV, a strong TAMRup to 30% is found with
a characteristic voltage dependence and a reversal of sign.With the help of ab initio calculations, the TAMR can
be traced back to a spin-polarized occupied surface state that experiences a strong spin-orbit interaction leading
to a magnetization direction depending on hybridization with bulk states.