Günther Bauer, Gunther Springholz,
" Study of misfit-dislocation formation in strained-layer heteroepitaxy using UHV-scanning tunneling microscopy "
: C,H,N and O in Si and Characterization and Simulation of Materials and Processes, Serie European Materials Research Society Symposia Proceedings, Vol. 37, Seite(n) 96-100, 1996, ISSN: 0921-5107, G. Springholz, G. Bauer: "Study of misfit-dislocation formation in strained-layer heteroepitaxy using UHV-scanning tunneling microscopy", Materials Science and Engineering B37, 96-100 (1996), ISSN-Number 0921-5107 // Series ISSN: 0921-5107
Original Titel:
Study of misfit-dislocation formation in strained-layer heteroepitaxy using UHV-scanning tunneling microscopy
Sprache des Titels:
Englisch
Original Buchtitel:
C,H,N and O in Si and Characterization and Simulation of Materials and Processes
Serie:
European Materials Research Society Symposia Proceedings
Volume:
37
Seitenreferenz:
96-100
Erscheinungsjahr:
1996
Notiz zum Zitat:
G. Springholz, G. Bauer: "Study of misfit-dislocation formation in strained-layer heteroepitaxy using UHV-scanning tunneling microscopy", Materials Science and Engineering B37, 96-100 (1996), ISSN-Number 0921-5107 // Series ISSN: 0921-5107