Rajdeep Adhikari, Tian Li, Giulia Capuzzo, Alberta Bonanni,
"Controlling a three dimensional electron slab of graded AlxGa1?xN"
, in Applied Physics Letters, Vol. 108, Nummer 2, Seite(n) 022105, 2016, ISSN: 0003-6951
Original Titel:
Controlling a three dimensional electron slab of graded AlxGa1?xN
Sprache des Titels:
Englisch
Original Kurzfassung:
Polarization induced degenerate n-type doping with electron concentrations up to ?1020?cm?3 is achieved in graded AlxGa1?xN layers (x: 0% ? 37%) grown on unintentionally doped and on n-doped GaN:Si buffer/reservoir layers by metal organic vapor phase epitaxy. High resolution x-ray diffraction, transmission electron microscopy, and electron dispersive x-ray spectroscopy confirm the gradient in the composition of the AlxGa1?xN layers, while Hall effect studies reveal the formation of a three dimensional electron slab, whose conductivity can be adjusted through the GaN(:Si) buffer/reservoir.
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