Growth, structure and morphology of epitaxial Fe(0 0 1) films on GaAs(0 0 1) c(4 times 4)
Sprache des Titels:
Englisch
Original Kurzfassung:
We studied epitaxy, growth, structure and morphology of thin Fe(0 0 1) films on
the As-rich GaAs(0 0 1)-c(4 × 4) surface, deposited by molecular beam epitaxy at
growth temperatures between room temperature and 250° C. Electron and x-ray
diffraction (XRD) techniques evidence epitaxial growth with Fe(0 0 1)[1 0 0] || GaAs(0 0 1)[1 0 0].
The residual strain derived from the XRD results is consistent with recent
stress measurements. Cross-sectional transmission electron microscopy reveals
an abrupt interface for room-temperature films and the formation of a ~10 nm
thick crystalline Fe?Ga?As intermediate layer at 250° C. The dependence of the
surface morphology on growth temperature and annealing evidences a kinetic
roughening of the Fe surface at growth temperatures of 100?200° C due to the
presence of step-edge barriers
Forschungs-