Tobias Frischmuth, Michael Schneider, Thomas Grille, Ulrich Schmid,
"Effect of Reactive Gas Flow Ratio on IC-PECVD Deposited a-SiC:H Thin Films"
: EUROSENSORS 2014, the 28th European Conference on Solid-State Transducers, Elsevier, Seite(n) 128?131, 9-2014
Original Titel:
Effect of Reactive Gas Flow Ratio on IC-PECVD Deposited a-SiC:H Thin Films
Sprache des Titels:
Englisch
Original Buchtitel:
EUROSENSORS 2014, the 28th European Conference on Solid-State Transducers
Original Kurzfassung:
Hydrogenated amorphous silicon carbide layers are deposited using an inductive-coupled plasma-enhanced chemical vapour deposition process. The nominal thickness of the thin films is 300 nm and the chemical composition ranges from carbon rich to pure Si films by varying the silane to methane ratio ?. The compressive residual stress of the Si-C compound exhibits a maximum at ? = 0.45. The deposition rate and the refractive index increase linearly with increasing ?. Furthermore, Fourier transformed infra- red spectroscopy shows a correlation of the Si-C vibration mode with the residual stress.
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