J. Endres, S. Danis, Günther Bauer,
"The misfit dislocation density profile in graded SiGe/Si(001) layers prepared at different temperatures"
, in J. Phys.: Condens. Matter, Vol. 25, Seite(n) 175802, 2014
The misfit dislocation density profile in graded SiGe/Si(001) layers prepared at different temperatures
Sprache des Titels:
We present a generalization of the Dodson?Tsao kinematic model of misfit dislocation for
graded SiGe/Si(001) layers. The layers were prepared under different growing conditions
(temperature). The misfit dislocation distribution has been determined by means of
high-resolution x-ray scattering. Analysis of the reciprocal space maps was compared with the
kinematic Dodson?Tsao model and the equilibrium Tersoff model.